FGH40T100SMD Fairchild Semiconductor, FGH40T100SMD Datasheet

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FGH40T100SMD

Manufacturer Part Number
FGH40T100SMD
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FGH40T100SMD
Manufacturer:
FAIRCHILD
Quantity:
10 000
Company:
Part Number:
FGH40T100SMD
Quantity:
5 800
©2012 Fairchild Semiconductor Corporation
FGH40T100SMD Rev. C2
Absolute Maximum Ratings
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
FGH40T100SMD
1000V, 40A Field Stop Trench IGBT
Features
• High current capability
• Low saturation voltage: V
• High input impedance
• Fast switching
• RoHS compliant
Applications
• UPS, welder, solar application
• PFC application
V
V
I
I
I
I
P
T
T
T
R
R
R
C
CM (1)
F
FM (1)
CES
GES
D
J
stg
L
qJC
qJC
qJA
Symbol
Symbol
(IGBT)
(Diode)
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Pulsed Diode Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
CE(sat)
= 1.9V(Typ.) @ I
E
COLLECTOR
C
(FLANGE)
G
Parameter
Description
C
= 40A
@ T
@ T
@ T
@ T
@ T
@ T
@ T
@ T
C
C
C
C
C
C
C
C
= 25
1
= 25
= 125
= 25
= 25
= 125
= 25
= 125
General Description
Using Novel Field Stop Trench IGBT Technology, Fairchild’s
new series of Field Stop Trench IGBTs offer the optimum per-
formance for hard switching application such as UPS, welder,
solar applications.
o
o
o
o
C
o
C
C
C
C
o
o
o
C
C
C
Typ.
-
-
-
G
-55 to +175
-55 to +175
Ratings
1000
± 20
120
120
333
300
111
80
40
80
40
C
E
Max.
0.45
0.8
40
February 2012
www.fairchildsemi.com
Units
Units
o
o
o
C/W
C/W
C/W
o
o
o
W
W
V
V
A
A
A
A
A
A
C
C
C

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FGH40T100SMD Summary of contents

Page 1

... Thermal Resistance, Junction to Case qJC R Thermal Resistance, Junction to Ambient qJA ©2012 Fairchild Semiconductor Corporation FGH40T100SMD Rev. C2 General Description Using Novel Field Stop Trench IGBT Technology, Fairchild’s new series of Field Stop Trench IGBTs offer the optimum per- = 40A C formance for hard switching application such as UPS, welder, solar applications ...

Page 2

... E Turn-Off Switching Loss off E Total Switching Loss ts Q Total Gate Charge g Q Gate to Emitter Charge ge Q Gate to Collector Charge gc FGH40T100SMD Rev. C2 Package Eco Status Packaging Type TO-247 RoHS T = 25°C unless otherwise noted C Test Conditions = 0V 1mA 0V 250 uA ...

Page 3

... Electrical Characteristics of Diode Symbol Parameter V Diode Forward Voltage FM E Diode Reverse Recovery Energy Diode Reverse Recovery Time rr Q Diode Reverse Recovery Charge rr FGH40T100SMD Rev 25°C unless otherwise noted C Test Conditions 40A 175 =40A, dI /dt = 200A/ms ...

Page 4

... Collector-Emitter Voltage, V Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level 4 Common Emitter V = 15V 100 Collector-EmitterCase Temperature, T FGH40T100SMD Rev. C2 Figure 2. Typical Output Characteristics 120 10V [V] CE Figure 4. Transfer Characteristics [V] CE Figure 6 ...

Page 5

... Figure 11. SOA Characteristics 300 100 *Notes: 0 175 Single Pulse 0. 100 Collector-Emitter Voltage, V FGH40T100SMD Rev. C2 Figure 8. Saturation Voltage vs Common Emitter [V] GE Figure 10. Gate charge Characteristics 15 C ies 12 C ...

Page 6

... Collector Current, I Figure 17. Switching Loss vs. Collector Current off 0 Collector Current, I FGH40T100SMD Rev. C2 Figure 14. Turn-on Characteristics vs. = 600V 15V 40A 175 Figure 16. Switching Loss vs. Common Emitter V = 15V ...

Page 7

... Forward Voltage, V Figure 23. Stored Charge 2 --- 1.6 dI/dt = 200A/us 1.2 0.8 0.4 100A/us 0 Forward Current, I FGH40T100SMD Rev. C2 Figure 20. Load Current Vs. Frequence 125 150 175 Figure 22. Reverse Current 1000 100 0 --- 0 ...

Page 8

... Typical Performance Characteristics 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 0.00001 1 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.00001 FGH40T100SMD Rev. C2 Figure 25. Transient Thermal Impedance of IGBT single pulse 0.0001 0.001 Rectangular Pulse Duration [sec] Figure 26.Transient Thermal Impedance of Diode 0.5 single pulse 0.0001 0.001 Rectangular Pulse Duration [sec Duty Factor t1/t2 Peak T = Pdm x Zthjc + T ...

Page 9

... Mechanical Dimensions TO - 247AB (FKS PKG CODE 001) FGH40T100SMD Rev www.fairchildsemi.com ...

Page 10

... Datasheet Ident ificatio uct Status Advance Information Formativ Design Preliminary First Production No Identificati on Needed Full Production Obsol ete Not In Pr oduction FGH40T100SMD Rev. C2 PowerTrench ® PowerXS™ SM Programmable Active Droopä ® QSä Quiet Ser iesä RapidConfigureä ...

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