FYPF2006DN Fairchild Semiconductor, FYPF2006DN Datasheet
FYPF2006DN
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FYPF2006DN Summary of contents
Page 1
... Maximum Thermal Resistance, Junction to Case (per diode) JC Electrical Characteristics Symbol V Maximum Instantaneous Forward Voltage * FM I Maximum Instantaneous Reverse Current * RM * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2000 Fairchild Semiconductor International FYPF2006DN TO-220F =25 C unless otherwise noted C Parameter @ T = 120 C C 60Hz Single Half-Sine Wave Parameter ...
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... Reverse Voltage, V Figure 3. Typical Junction Capacitance (per diode 100 Case Temperature, T Figure 5. Forward Current Derating Curve ©2000 Fairchild Semiconductor International 100 10 1 0.1 0.01 0.001 0 1.5 2.0 [V] F Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode = ...
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... Package Dimensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2000 Fairchild Semiconductor International TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, May 2000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ CMOS™ FACT™ FACT Quiet Series™ ® ...