FYPF2010DN Fairchild Semiconductor, FYPF2010DN Datasheet
FYPF2010DN
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FYPF2010DN Summary of contents
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... Electrical Characteristics Symbol V Maximum Instantaneous Forward Voltage * FM I Maximum Instantaneous Reverse Current * RM (per diode) * Pulse Test: Pulse Width=300 s, Duty Cycle 2% ©2002 Fairchild Semiconductor Corporation FYPF2010DN TO-220F (per diode) T =25 C unless otherwise noted C Parameter @ T = 105 C C 60Hz Single Half-Sine Wave Parameter ...
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... Reverse Voltage, V Figure 3. Typical Junction Capacitance (per diode Case Temperature, T Figure 5. Forward Current Derating Curve ©2002 Fairchild Semiconductor Corporation 10 1 0.1 0.01 1E-3 1.0 1.5 [V] F Figure 2. Typical Reverse Current = 0 100 100µ ...
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... Package Dimensions MAX1.47 0.80 0.10 0.35 0.10 2.54TYP [2.54 0.20 ©2002 Fairchild Semiconductor Corporation TO-220F 10.16 ø3.18 0.20 0.10 (7.00) (1.00x45 ) #1 0.50 2.54TYP ] [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) +0.10 2.76 –0.05 0.20 Dimensions in Millimeters Rev. A, September 2002 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ ...