FYP2010DN Fairchild Semiconductor, FYP2010DN Datasheet
FYP2010DN
Manufacturer Part Number
FYP2010DN
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.FYP2010DN.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FYP2010DN
Manufacturer:
FAIRCHILD
Quantity:
70
Part Number:
FYP2010DN
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FYP2010DNTU
Manufacturer:
Fairchild Semiconductor
Quantity:
1 967
Company:
Part Number:
FYP2010DNTU
Manufacturer:
VISHAY
Quantity:
4 000
Company:
Part Number:
FYP2010DNTU
Manufacturer:
Fairchi/ON
Quantity:
86 000
Part Number:
FYP2010DNTU
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FYP2010DN Rev. B1
© 2009 Fairchild Semiconductor Corporation
FYP2010DN
Schottky Barrier Rectifier
Features
• Low forward voltage drop
• High frequency properties and switching speed
• Guard ring for over-voltage protection
Absolute Maximum Ratings
Thermal Characteristics
Electrical Characteristics
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
V
I
RM *
FM *
Symbol
Symbol
Symbol
T
V
J,
I
R
I
F(AV)
FSM
V
RRM
T
θJC
R
STG
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current (per diode)
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
Maximum Thermal Resistance, Junction to Case (per diode)
Maximum Instantaneous Forward Voltage
I
I
I
I
Maximum Instantaneous Reverse Current
@ rated V
F
F
F
F
= 10A
= 10A
= 20A
= 20A
R
1 2 3
(per diode)
T
TO-220
A
Parameter
Parameter
Parameter
=25°C unless otherwise noted
1
1.Anode
3.Anode
@ T
T
T
T
T
T
T
C
C
C
C
C
C
C
= 120°C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
2. Cathode
-65 to +150
Value
Value
Value
0.77
0.65
0.75
100
100
150
1.7
0.1
20
20
-
www.fairchildsemi.com
August 2009
Units
Units
Units
°C/W
mA
°C
V
V
A
A
V
Related parts for FYP2010DN
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
Fairchild Semiconductor [IGBT MODULE]
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
Discrete Semiconductor Modules
Manufacturer:
Fairchild Semiconductor
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
Part Number:
Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
Manufacturer:
Fairchild Semiconductor
Datasheet:
FYP2010DN Summary of contents
Page 1
... 20A 20A F I Maximum Instantaneous Reverse Current rated Pulse Test: Pulse Width=300μs, Duty Cycle=2% © 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 1.Anode 3.Anode TO-220 T =25°C unless otherwise noted A Parameter @ T = 120°C C Parameter (per diode) Parameter = 25 °C ...
Page 2
... Reverse Voltage, V Figure 3. Typical Junction Capacitance (per diode Case Temperature, T Figure 5. Forward Current Derating Curve © 2009 Fairchild Semiconductor Corporation FYP2010DN Rev 0.1 C 0.01 1E-3 1.0 1 100 100µ [V] R Figure 4 ...
Page 3
... Physical Dimensions © 2009 Fairchild Semiconductor Corporation FYP2010DN Rev. B1 TO-220 3 www.fairchildsemi.com ...
Page 4
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. AccuPower FPS Auto-SPM F-PFS FRFET Build it Now CorePLUS Global Power Resource CorePOWER Green FPS ...