FFPF10UP30S Fairchild Semiconductor, FFPF10UP30S Datasheet
FFPF10UP30S
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FFPF10UP30S Summary of contents
Page 1
... Single Half-Sine Wave T T Operating Junction and Storage Temperature J, STG Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case θJC ©2005 Fairchild Semiconductor Corporation FFPF10UP30S Rev. A TO-220F 2. Anode (per diode 25°C unless otherwise noted a Parameter @ T = 125° 25°C unless otherwise noted ...
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... =10A, di/dt = 200A/µ Avalanche Energy (L = 20mH) AVL * Pulse Test: Pulse Width=300µs, Duty Cycle=2% FFPF10UP30S Rev. A (per diode 25°C unless otherwise noted a Parameter Min ° 150 ° ° 150 °C ...
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... Forward Voltage , V Figure 3. Typical Junction Capacitance 400 100 10 0.1 1 Reverse Voltage , V Figure 5. Typical Reverse Recovery Current 100 200 di/dt [A/ FFPF10UP30S Rev. A Figure 2. Typical Reverse Current 0.1 C 0.01 0.001 1.5 2.0 0 [V] F Figure 4. Typical Reverse Recovery Time 36 Typical Capacitance 197 ...
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Package Demensions MAX1.47 0.80 0.10 2.54TYP [2.54 ] 0.20 © TO-220F 2L ø3.18 10.16 0.10 0.20 (1.00x45 ) 0.35 0.10 2.54TYP [2.54 ] 0.20 9.40 0.20 2.54 0.20 (0.70) 2.76 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Ultrafast Recovery Power ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FFPF10UP30S Rev. A IntelliMAX™ POP™ ISOPLANAR™ Power247™ LittleFET™ PowerEdge™ MICROCOUPLER™ PowerSaver™ MicroFET™ ...