FFB20UP30DN Fairchild Semiconductor, FFB20UP30DN Datasheet
FFB20UP30DN
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FFB20UP30DN Summary of contents
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... Operating Junction and Storage Temperature J, STG Thermal Characteristics Symbol R Maximum Thermal Resistance, Junction to Case θJC Package Marking and Ordering Information Device Marking Device F20UP30DN FFB20UP30DNTM ©2006 Fairchild Semiconductor Corporation FFB20UP30DN Rev. A =10A) F TO-263AB/D2-PAK T = 25°C unless otherwise noted C Parameter / 130°C C Parameter Package ...
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... I =10A, di/dt = 200A/µ Avalanche Energy (L = 20mH) AVL * Pulse Test: Pulse Width=300µs, Duty Cycle=2% Test Circuit and Waveforms FFB20UP30DN Rev. A (per diode 25°C unless otherwise noted C Parameter = 25 ° 150 ° ° 150 °C ...
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... Forward Voltage , V Figure 3. Typical Junction Capacitance 400 100 10 0.1 1 Reverse Voltage , V Figure 5. Typical Reverse Recovery Current 100 200 di/dt [A/ FFB20UP30DN Rev. A Figure 2. Typical Reverse Current 0.1 C 0.01 0.001 1.5 2.0 0 [V] F Figure 4. Typical Reverse Recovery Time 36 Typical Capacitance 197 ...
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Package Demensions © 2 TO-263AB/D -PAK Dimensions in Millimeters Ultrafast Recovery Power Rectifier ...
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... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FFB20UP30DN Rev. A ISOPLANAR™ PowerSaver™ LittleFET™ PowerTrench MICROCOUPLER™ QFET MicroFET™ QS™ MicroPak™ ...