FFPF08S60S Fairchild Semiconductor, FFPF08S60S Datasheet

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FFPF08S60S

Manufacturer Part Number
FFPF08S60S
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2006 Fairchild Semiconductor Corporation
FFPF08S60S Rev. A
FFPF08S60S
Stealth 2 Rectifier
Features
• High Speed Switching ( Max. t
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assignments
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering
V
V
V
I
I
T
R
Device Marking
F(AV)
FSM
J,
RRM
RWM
R
θJC
Symbol
T
Symbol
STG
F08S60S
Maximum Thermal Resistance, Junction to Case
1. Cathode 2. Anode
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
FFPF08S60STU
Device
rr
<30ns @ I
TO-220F-2L
T
C
= 25°C unless otherwise noted
F
Parameter
=8A )
T
C
= 25°C unless otherwise noted
Parameter
TO-220F-2L
Package
Information
@ T
1
8A, 600V Stealth 2 Rectifier
The FFPF08S60S is stealth2 rectifier with soft recovery charac-
teristics (t
rectifier and are silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode
in switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching
circuits reducing power loss in the switching transistors.
C
= 95 °C
Reel Size
rr
-
<30ns). They has half the recovery time of hyperfast
1. Cathode
1
Tape Width
Max
3.4
- 65 to +150
Value
-
2. Anode
600
600
600
80
8
2
Quantity
www.fairchildsemi.com
Units
Units
°C/W
April 2007
50
°C
V
V
V
A
A
tm

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FFPF08S60S Summary of contents

Page 1

... F08S60S FFPF08S60STU ©2006 Fairchild Semiconductor Corporation FFPF08S60S Rev. A 8A, 600V Stealth 2 Rectifier =8A ) The FFPF08S60S is stealth2 rectifier with soft recovery charac- F teristics (t rectifier and are silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions ...

Page 2

... I =8A, di/dt = 200A/µ Irr S factor Avalanche Energy (L = 40mH) AVL Notes: 1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFPF08S60S Rev 25°C unless otherwise noted C Conditions = 25 ° 125 ° ° 125 °C ...

Page 3

... REVERSE VOLTAGE, V Figure 5. Typical Reverse Recovery Current 125 100 200 di/dt [A/ FFPF08S60S Rev 25°C unless otherwise noted C 1E-4 1E =125 1E-7 C 1E-8 1E-9 2.0 2.4 2.8 3.2 [V] F Figure 4. Typical Reverse Recovery Time 100 f = 1MHz ...

Page 4

... Mechanical Dimensions MAX1.47 0.80 2.54TYP [2.54 FFPF08S60S Rev. A TO-220F 2L ±0.20 ø3.18 ±0.10 10.16 (1.00x45°) ±0.10 0.35 ±0.10 2.54TYP ±0.20 ] [2.54 ±0.20 ] 9.40 ±0.20 4 ±0.20 2.54 (0.70) ±0.20 2.76 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FFPF08S60S Rev. A GlobalOptoisolator™ Power247 GTO™ PowerEdge™ HiSeC™ PowerSaver™ i-Lo™ PowerTrench ImpliedDisconnect™ Programmable Active Droop™ ...

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