FFPF08H60S Fairchild Semiconductor, FFPF08H60S Datasheet

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FFPF08H60S

Manufacturer Part Number
FFPF08H60S
Description
Manufacturer
Fairchild Semiconductor
Datasheet

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©2006 Fairchild Semiconductor Corporation
FFPF08H60S Rev. A
FFPF08H60S
Hyperfast 2 Rectifier
Features
• High Speed Switching ( t
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• Low Forward Voltage( V
Applications
• General Purpose
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
Pin Assignments
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering
V
V
V
I
I
T
R
Device Marking
F(AV)
FSM
J,
RRM
RWM
R
θJC
Symbol
T
Symbol
STG
F08H60S
Maximum Thermal Resistance, Junction to Case
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
1. Cathode 2. Anode
FFPF08H60STU
F
rr
=2.1V(Max.) @ I
=45ns(Max.) @ I
Device
TO-220F-2L
T
C
= 25°C unless otherwise noted
F
Parameter
F
=8A )
T
=8A )
C
= 25°C unless otherwise noted
Parameter
Package
Information
TO-220F
@ T
1
8A, 600V Hyperfast 2 Rectifier
The FFPF08H60S is hyperfast2 rectifier (t
I
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
This device is intended for use as freewheeling/clamping rectifi-
ers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
tors.
C
F
=8A). it has half the recovery time of ultrafast rectifier and is
= 105 °C
Reel Size
-
1. Cathode
1
Tape Width
Max
3.4
- 65 to +150
Value
-
2. Anode
600
600
600
60
8
2
rr
Quantity
=45ns(Max.) @
www.fairchildsemi.com
Units
Units
°C/W
April 2007
50
°C
V
V
V
A
A
tm

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FFPF08H60S Summary of contents

Page 1

... Device Marking Device F08H60S FFPF08H60STU ©2006 Fairchild Semiconductor Corporation FFPF08H60S Rev. A 8A, 600V Hyperfast 2 Rectifier =8A ) The FFPF08H60S is hyperfast2 rectifier ( =8A). it has half the recovery time of ultrafast rectifier and is F silicon nitride passivated ion-implanted epitaxial planar con- struction. =8A ) This device is intended for use as freewheeling/clamping rectifi- ...

Page 2

... I =8A, di/dt = 100A/µ Avalanche Energy (L = 40mH) AVL Notes: 1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFPF08H60S Rev 25°C unless otherwise noted C Conditions = 25 ° 125 ° ° 125 °C ...

Page 3

... REVERSE VOLTAGE, V Figure 5. Typical Reverse Recovery Current =125 100 200 di/dt [A/ FFPF08H60S Rev 25°C unless otherwise noted C Figure 2. Typical Reverse Current 100 10 1 0.1 0.01 1E [V] F Figure 4. Typical Reverse Recovery Time 100 f=1MHz 90 80 ...

Page 4

... Mechanical Dimensions MAX1.47 0.80 2.54TYP [2.54 FFPF08H60S Rev. A TO-220F 2L ±0.20 ø3.18 ±0.10 10.16 (1.00x45°) ±0.10 0.35 ±0.10 2.54TYP ±0.20 ] [2.54 ±0.20 ] 9.40 ±0.20 4 ±0.20 2.54 (0.70) ±0.20 2.76 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ® ACEx Across the board. Around the world.™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ ...

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