FFH30S60S Fairchild Semiconductor, FFH30S60S Datasheet

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FFH30S60S

Manufacturer Part Number
FFH30S60S
Description
The FFH30S60S is stealth2 rectifier with soft recovery characteristics
Manufacturer
Fairchild Semiconductor
Datasheet

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©2007 Fairchild Semiconductor Corporation
FFH30S60S Rev. A
Absolute Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FFH30S60S
Stealth 2 Rectifier
Features
• High Speed Switching, t
• High Reverse Voltage and High Reliability
• RoHS compliant
Applications
• General Purpose
• Switching Mode Power Supply
• Boost Diode in continuous mode power factor corrections
• Power switching circuits
Pin Assigments
V
V
V
I
I
T
R
F(AV)
FSM
Device Marking
J
RRM
RWM
R
θJC
, T
Symbol
Symbol
STG
F30S60S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating and Storage Temperature Range
Maximum Thermal Resistance, Junction to Case
rr
FFH30S60STU
< 40ns @ I
1. Cathode 2. Anode
Device
F
= 30A
TO-247-2L
T
C
= 25
Parameter
Parameter
o
Package
TO-247-2L
C unless otherwise noted
@ T
C
= 102
1
30A, 600V Stealth 2 Rectifier
The FFH30S60S is stealth2 rectifier with soft recovery charac-
teristics. It is silicon nitride passivated ion-implanted epitaxial
planar construction.
This device is intended for use as freewheeling of boost diode in
switching power supplies and other power swithching applica-
tions. Their low stored charge and hyperfast soft recovery mini-
mize ringing and electrical noise in many power switching circuits
reducing power loss in the switching transistors.
o
C
Reel Size
-
1. Cathode
Tape Width
2. Anode
-
-65 to +150
Ratings
Ratings
600
600
600
300
30
1.1
September 2007
Quantity
www.fairchildsemi.com
50
Units
Units
o
C/W
o
V
V
V
A
A
C
tm

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FFH30S60S Summary of contents

Page 1

... Device F30S60S FFH30S60STU ©2007 Fairchild Semiconductor Corporation FFH30S60S Rev. A 30A, 600V Stealth 2 Rectifier The FFH30S60S is stealth2 rectifier with soft recovery charac- = 30A F teristics silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions ...

Page 2

... S factor 30A, di/dt = 200A/µ factor Avalanche Energy ( L = 40mH) AVL Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFH30S60S Rev unless otherwise noted C Parameter 125 ...

Page 3

... T = 125 100 150 200 [ µ di/ FFH30S60S Rev. A Figure 2. Typical Reverse Current 1000 100 0.1 0. [V] F Figure 4. Typical Reverse Recovery Time 100 Typical Capacitance 271 100 100 ...

Page 4

... Mechanical Dimensions FFH30S60S Rev. A TO-247-2L 4 Dimensions in Millimeters www.fairchildsemi.com ...

Page 5

... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FFH30S60S Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...

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