FFPF04S60S Fairchild Semiconductor, FFPF04S60S Datasheet
FFPF04S60S
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FFPF04S60S Summary of contents
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... Device F04S60S FFPF04S60STU ©2007 Fairchild Semiconductor Corporation FFPF04S60S Rev. A 4A, 600V STEALTH The FFPF04S60S is STEALTH = 4A F characteristics silicon nitride passivated ion-implanted epi- taxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions ...
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... S factor 4A, di/dt = 200A/µ factor Avalanche Energy ( L = 40mH) AVL Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFPF04S60S Rev unless otherwise noted C Parameter 125 ...
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... Figure 5. Typical Reverse Recovery Current vs. di/ 125 100 200 300 400 [ µ ] di/ FFPF04S60S Rev. A Figure 2. Typical Reverse Current 0.1 0.01 1E [V] F Figure 4. Typical Reverse Recovery Time 60 Typical Capacitance 100 [V] R Figure 6 ...
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... Mechanical Dimensions MAX1.47 0.80 2.54TYP [2.54 FFPF04S60S Rev. A TO-220F 2L ±0.10 10.16 ±0.20 ø3.18 (1.00x45°) ±0.10 ±0.10 0.35 2.54TYP ±0.20 ] [2.54 ±0.20 ] 9.40 ±0.20 4 2.54 ±0.20 (0.70) ±0.20 2.76 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
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... Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FFPF04S60S Rev. A Green FPS™ Power247 Green FPS™ e-Series™ POWEREDGE GTO™ Power-SPM™ i-Lo™ PowerTrench IntelliMAX™ Programmable Active Droop™ ...