FFP08S60SN Fairchild Semiconductor, FFP08S60SN Datasheet
FFP08S60SN
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FFP08S60SN Summary of contents
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... Device F08S60SN FFP08S60SNTU ©2008 Fairchild Semiconductor Corporation FFP08S60SN Rev. A 8A, 600V STEALTH The FFP08S60SN is STEALTH = 8A F characteristics silicon nitride passivated ion-implanted epi- taxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions ...
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... S factor 8A, di/dt = 200A/µ factor Avalanche Energy ( L = 40mH) AVL Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms FFP08S60SN Rev unless otherwise noted C Parameter 125 ...
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... Current vs. di/ 125 100 200 300 [ ] µ di/ FFP08S60SN Rev. A Figure 2. Typical Reverse Current vs 0.1 0.01 0.001 [V] F Figure 4. Typical Reverse Recovery Time 40 Typical Capacitance 100 [V] R Figure 6. Forward Current Derating Curve ...
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... Mechanical Dimensions FFP08S60SN Rev. A TO220 2L 4 Dimensions in Millimeters www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FFP08S60SN Rev. A FPS™ PDP-SPM™ ® FRFET Power220 SM Global Power Resource POWEREDGE Green FPS™ Power-SPM™ Green FPS™ e-Series™ ...