FFPF08S60SN Fairchild Semiconductor, FFPF08S60SN Datasheet
FFPF08S60SN
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FFPF08S60SN Summary of contents
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... Device F08S60SN FFPF08S60SNTU ©2008 Fairchild Semiconductor Corporation FFPF08S60SN Rev. A 8A, 600V STEALTH The FFPF08S60SN is STEALTH = 8A F characteristics silicon nitride passivated ion-implanted epi- taxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applica- tions ...
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... I = 8A, di/dt = 200A/μ factor Avalanche Energy ( L = 40mH) AVL Notes: 1: Pulse: Test Pulse width = 300μs, Duty Cycle = 2% Trr test circuit and waveform Avalanch energy test circuit and waveform FFPF08S60SN Rev unless otherwise noted C Parameter ...
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... Current vs. di/ 125 100 200 300 [ μ ] di/ FFPF08S60SN Rev. A Figure 2. Typical Reverse Current vs 0.1 0.01 0.001 [V] F Figure 4. Typical Reverse Recovery Time 40 Typical Capacitance 100 [V] R Figure 6. Forward Current Derating Curve ...
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... Mechanical Dimensions MAX1.47 ±0.10 0.80 2.54TYP [2.54 ±0.20 FFPF08S60SN Rev. A TO220F 2L ø3.18 ±0.10 10.16 ±0.20 0.35 ±0.10 2.54TYP ] [2.54 ±0.20 ] ±0.20 9.40 4 2.54 ±0.20 (0.70) (1.00x45°) ±0.20 2.76 +0.10 0.50 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...
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... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FFPF08S60SN Rev. A FPS™ PDP-SPM™ ® FRFET Power220 SM Global Power Resource POWEREDGE Green FPS™ Power-SPM™ Green FPS™ e-Series™ ...