MDB10S Fairchild Semiconductor, MDB10S Datasheet
MDB10S
Manufacturer Part Number
MDB10S
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.MDB10S.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MDB10SV
Manufacturer:
PANJIT
Quantity:
12 000
MDB6S / MDB8S / MDB10S Rev. A1
© 2012 Fairchild Semiconductor Corporation
MDB6S / MDB8S / MDB10S
1A, MicroDIP, Single-Phase Bridge Rectifiers
Features
• Low Package Profile: 1.45 mm (max)
• Requires Only 35 mm
• High Surge Current Capability: 30A (max)
• Glass Passivated Junction Rectifiers
• UL Certification : E352360
Absolute Maximum Ratings
* 60Hz sine wave, R-load, T
** 60Hz sine wave, Non-repetitive 1 cycle peak value, T
Thermal Characteristics*
* Device mounted on FR-4 PCB with board size = 76.2mm x 114.3mm (JESD51-3 standards)
Electrical Characteristics
Symbol
Symbol
Symbol
V
V
I
T
R
I
V
F(AV)
ψ
FSM
RRM
RMS
STG
V
C
I
T
I
θJA
DC
2
R
JL
J
F
J
t
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Average Rectified Forward Current *
Peak Forward Surge Current **
I
Operating Junction Temperature Range
Storage Temperature Range
Thermal Resistance, Junction-Ambient
Thermal Characterization, Junction to Lead
Maximum Forward Voltage
Maximum Reverse Current
Typical Junction Capacitance V
2
t Rating for fusing (t<8.3ms)
2
Parameter
of Board Space
A
= 25°C on FR-4 PCB.
- Measurement with Dual Dice
- Measurement with Single Die
- Measured at Anode pin
- Measured at Cathode pin
Parameter
Parameter
T
A
= 25°C unless otherwise specified
T
A
= 25°C unless otherwise noted
I
Pulse measurement, Per diode
@ V
Pulse measurement, Per diode
F
R
= 1A,
= 4V, f = 1MHz
RRM
,
J
= 25°C.
1
Test condition
MDB6S
600
420
600
-55 to +150
-55 to +150
MDB8S
Value
3.735
Typ.
800
560
800
250
150
1.0
30
57
15
+
Value
MDB10S
Micro DIP
1.1
10
10
1000
1000
700
-
www.fairchildsemi.com
January 2012
Units
Units
Units
°C/W
°C/W
°C/W
°C/W
A
μA
pF
°C
°C
V
V
V
A
A
V
2
S
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MDB10S Summary of contents
Page 1
... Parameter V Maximum Forward Voltage F I Maximum Reverse Current R C Typical Junction Capacitance V J © 2012 Fairchild Semiconductor Corporation MDB6S / MDB8S / MDB10S Rev 25°C unless otherwise noted A Parameter MDB6S = 25°C. J Parameter - Measurement with Dual Dice - Measurement with Single Die - Measured at Anode pin ...
Page 2
... Figure 1. Forward Voltage vs Forward Current (Per diode) 100 Reverse Voltage, V Figure 3. Total Capacitance © 2012 Fairchild Semiconductor Corporation MDB6S / MDB8S / MDB10S Rev. A1 100000 10000 1000 100 o T =150 0 [A] F Figure 2. Reverse Current vs Reverse Voltage ...
Page 3
... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. 2Cool F-PFS FRFET AccuPower Global Power Resource AX-CAP * GreenBridge BitSiC Green FPS Build it Now ...