ST72521R9-Auto STMicroelectronics, ST72521R9-Auto Datasheet - Page 232

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ST72521R9-Auto

Manufacturer Part Number
ST72521R9-Auto
Description
8-bit MCU for automotive
Manufacturer
STMicroelectronics
Datasheet

Specifications of ST72521R9-Auto

Hdflash Endurance
100 cycles, data retention 20 years
Clock Sources
crystal/ceramic resonator oscillators, internal RC oscillator and bypass for external clock
4 Power Saving Modes
Halt, Active Halt, Wait and Slow
Electrical characteristics
20.6
20.6.1
20.6.2
232/276
Memory characteristics
RAM and hardware registers
Table 140. RAM supply voltage
1. Minimum V
Flash memory
Table 141. Dual voltage HDFlash memory
1. Data based on characterization results, not tested in production
2. V
3. Data based on simulation results, not tested in production
Symbol
Symbol
T
T
hardware registers (only in Halt mode). Not tested in production.
N
ERASE
reasons.
f
V
t
t
V
PROG
CPU
I
I
VPP
RET
DD
PP
PP
RW
RM
PP
Warning:
must be applied only during the programming or erasing operation and not permanently for reliability
Operating frequency
Programming voltage
Supply current
V
Internal V
time
Data retention
Write erase cycles
Programming or erasing
temperature range
Data retention mode
DD
PP
supply voltage without losing data stored in RAM (in Halt mode or under RESET) or in
current
Parameter
Do not connect 12V to V
may damage the device.
Parameter
PP
(3)
stabilization
(3)
(1)
Doc ID 17660 Rev 1
(2)
Read mode
Write / Erase mode
4.5V < V
Run mode (f
Write / Erase
Power down mode / HALT
Read (V
Write / Erase
T
T
Halt mode (or RESET)
A
A
= 55°C
= 85°C
Conditions
PP
Conditions
PP
DD
= 12V)
before V
< 5.5V
CPU
= 4 MHz)
DD
is powered on, as this
Min
11.4
100
Min
-40
1.6
20
0
1
(1)
Typ
Typ
10
25
0
1
ST72521xx-Auto
Max
Max
12.6
200
10
30
85
8
8
3
(1)
cycles
years
Unit
MHz
Unit
mA
mA
µA
µs
°C
V
V

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