BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 8
BLL6G1214L-250
Manufacturer Part Number
BLL6G1214L-250
Description
250 W LDMOS power transistor intended for L-band radar applications in the 1
Manufacturer
NXP Semiconductors
Datasheet
1.BLL6G1214L-250.pdf
(14 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BLL6G1214L-250
Manufacturer:
Triquint
Quantity:
1 400
NXP Semiconductors
BLL6G1214L-250
Preliminary data sheet
7.2 Impedance information
7.3 Circuit information
Table 8.
Typical values unless otherwise specified.
f
GHz
1.2
1.3
1.4
Fig 15. Definition of transistor impedance
Fig 16. Component layout for application circuit
Printed-Circuit Board (PCB): Duroid 6010;
thickness copper plating = 35 m.
See
Typical impedance
Table 9
All information provided in this document is subject to legal disclaimers.
C10
for a list of components.
C1
Rev. 1 — 16 February 2012
C6
C3
C5
Z
1.077 j2.78
1.352 j2.949
1.881 j2.640
S
gate
Z
S
R1
r
= 10.15; thickness = 0.64 mm;
001aaf059
LDMOS L-band radar power transistor
Z
drain
L
BLL6G1214L-250
Z
1.288 j1.014
1.139 j1.086
1.038 j1.132
L
C4
C7
C8 C9
C2
© NXP B.V. 2012. All rights reserved.
aaa-002265
C11
8 of 14