BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 8

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL6G1214L-250
Preliminary data sheet
7.2 Impedance information
7.3 Circuit information
Table 8.
Typical values unless otherwise specified.
f
GHz
1.2
1.3
1.4
Fig 15. Definition of transistor impedance
Fig 16. Component layout for application circuit
Printed-Circuit Board (PCB): Duroid 6010; 
thickness copper plating = 35 m.
See
Typical impedance
Table 9
All information provided in this document is subject to legal disclaimers.
C10
for a list of components.
C1
Rev. 1 — 16 February 2012
C6
C3
C5
Z

1.077  j2.78
1.352  j2.949
1.881  j2.640
S
gate
Z
S
R1
r
= 10.15; thickness = 0.64 mm;
001aaf059
LDMOS L-band radar power transistor
Z
drain
L
BLL6G1214L-250
Z

1.288  j1.014
1.139  j1.086
1.038  j1.132
L
C4
C7
C8 C9
C2
© NXP B.V. 2012. All rights reserved.
aaa-002265
C11
8 of 14