BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 6

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL6G1214L-250
Preliminary data sheet
Fig 7.
Fig 9.
(W)
P
L
(%)
η
(1) f = 1200 MHz
(2) f = 1300 MHz
(3) f = 1400 MHz
(1) T
(2) T
D
350
300
250
200
150
100
50
40
30
20
10
50
0
0
0
t
Drain efficiency as a function of output power;
typical values
0
f = 1300 MHz; t
Output power as a function of input power;
typical values
p
h
h
= 1 ms;  = 10 %; T
= 25 C
= 85 C
50
5
100
p
= 1 ms;  = 10 %.
150
h
10
= 25 C.
200
250
15
All information provided in this document is subject to legal disclaimers.
P
(3)
aaa-002257
aaa-002259
(1)
P
300
L
i
(W)
(W)
(2)
(2)
(1)
Rev. 1 — 16 February 2012
350
20
Fig 8.
Fig 10. Power gain as a function of output power;
G
p
(dB)
(dB)
G
,RL
(1) T
(2) T
p
30
24
18
12
18
12
in
6
0
6
0
1150
0
P
Power gain, input return loss and drain
efficiency as function of frequency; typical
values
f = 1300 MHz; t
typical values
h
h
L
= 25 C
= 85 C
= 250 W; t
50
LDMOS L-band radar power transistor
100
BLL6G1214L-250
1250
p
= 1 ms;  = 10 %; T
p
= 1 ms;  = 10 %.
150
200
1350
250
h
© NXP B.V. 2012. All rights reserved.
f (MHz)
(2)
= 25 C.
P
aaa-002258
aaa-002260
300
L
G
η
RL
(W)
D
p
(1)
in
1450
350
50
48
46
44
42
40
(%)
η
6 of 14
D