BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 11

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
9. Handling information
10. Abbreviations
11. Revision history
Table 11.
BLL6G1214L-250
Preliminary data sheet
CAUTION
Document ID
BLL6G1214L-250 v.1
Revision history
Table 10.
Acronym
DC
ESD
IR
L-band
LDMOS
LDMOST
RF
SMD
VSWR
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Release date
20120216
Abbreviations
All information provided in this document is subject to legal disclaimers.
Description
Direct Current
ElectroStatic Discharge
InfraRed
Long wave band
Laterally Diffused Metal-Oxide Semiconductor
Laterally Diffused Metal-Oxide Semiconductor Transistor
Radio Frequency
Surface Mounted Device
Voltage Standing-Wave Ratio
Rev. 1 — 16 February 2012
Data sheet status
Preliminary data sheet
LDMOS L-band radar power transistor
BLL6G1214L-250
Change notice
-
© NXP B.V. 2012. All rights reserved.
Supersedes
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