BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 3

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
6. Characteristics
BLL6G1214L-250
Preliminary data sheet
Table 5.
[1]
Table 6.
T
Table 7.
Test signal: pulsed RF; t
T
Symbol
R
Z
Symbol Parameter
V
V
I
I
I
g
R
C
C
C
Symbol
V
I
P
f
t
DSS
DSX
GSS
Dq
range
p
j
case
fs
th(j-c)
(BR)DSS
GS(th)
DS
L
th(j-case)
DS(on)
iss
oss
rss
= 25
Z
IR measurements during development stage. During production: guaranteed by design.
= 25
th(j-c)

C
values are calculated from results obtained with ANSYS simulations and confirmed with
drain-source breakdown voltage V
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance V
input capacitance
output capacitance
reverse transfer capacitance

C; unless otherwise specified, in a class-AB production test circuit.
Thermal characteristics
DC Characteristics
RF characteristics
Parameter
thermal resistance from
junction to case
transient thermal impedance
from junction to case
Parameter
drain-source voltage
quiescent drain current
output power
frequency range
pulse duration
All information provided in this document is subject to legal disclaimers.
p
Rev. 1 — 16 February 2012
= 1 ms;

= 10 %; RF performance at V
Conditions
No RF applied
 = 10 %
 = 20 %
Conditions
V
V
V
V
V
V
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 1 MHz
D
GS
DS
GS
GS
DS
GS
DS
GS
GS
GS
GS
Conditions
T
T
= 11.7 A
case
case
t
t
t
t
t
= 20 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
= 0 V; V
= 0 V; V
= 0 V; V
p
p
p
p
p
= 1000 s;  = 10 %
= 100 s;  = 10 %
= 200 s;  = 10 %
= 300 s;  = 10 %
= 100 s;  = 20 %
= 85 C; P
= 85 C; P
GS(th)
GS(th)
LDMOS L-band radar power transistor
D
DS
DS
DS
DS
D
D
= 3.36 mA
+ 3.75 V;
+ 3.75 V;
DS
BLL6G1214L-250
= 336 mA
= 336 mA
= 42 V
= 40 V;
= 40 V;
= 40 V;
= 0 V
L
L
= 250 W
= 250 W
DS
= 36 V; I
Min
1.4
-
50
-
51.6
91.5
-
-
-
-
Min
-
-
250
1200 -
-
-
Dq
© NXP B.V. 2012. All rights reserved.
[1]
= 150 mA;
Typ
-
1.9
-
59
-
-
-
285
90
3
Typ Max
-
150 -
-
-
-
Typ
0.244
0.124
0.059
0.077
0.088
0.078
36
-
1400 MHz
1
100
Max
105.5 V
2.4
4.2
-
420
-
127
-
-
-
Unit
K/W
K/W
K/W
K/W
K/W
K/W
3 of 14
Unit
V
mA
W
ms
s
Unit
V
A
A
nA
mS
m
pF
pF
pF