BLL6G1214L-250 NXP Semiconductors, BLL6G1214L-250 Datasheet - Page 7

• Manufacturer Part Number: BLL6G1214L-250
• Description: 250 W LDMOS power transistor intended for L-band radar applications in the 1
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BLL6G1214L-250
Preliminary data sheet
Fig 11. Drain efficiency as a function of output power;
Fig 13. Power gain as a function of output power;
(dB)
(%)
η
G
(1) T
(2) T
(1) T
(2) T
D
p
50
40
30
20
10
18
12
0
6
0
0
f = 1300 MHz; t
typical values
0
f = 1300 MHz; t
typical values
h
h
h
h
= 25 C
= 85 C
= 25 C
= 85 C
50
100
100
p
p
= 1 ms;  = 10 %.
= 1 ms;  = 10 %.
150
200
200
250
300
(2)
(2)
All information provided in this document is subject to legal disclaimers.
P
aaa-002261
aaa-002263
P
300
L
(1)
L
(W)
(W)
(1)
Rev. 1 — 16 February 2012
350
400
Fig 12. Output power as a function of input power;
Fig 14. Drain efficiency as a function of output power;
(W)
(%)
P
η
(1) T
(2) T
(1) T
(2) T
D
400
300
200
100
L
50
40
30
20
10
0
0
0
0
f = 1300 MHz; t
typical values
f = 1300 MHz; t
typical values
h
h
h
h
= 25 C
= 85 C
= 25 C
= 85 C
LDMOS L-band radar power transistor
100
5
BLL6G1214L-250
p
p
= 100 s;  = 10 %.
= 100 s;  = 10 %.
200
10
300
15
© NXP B.V. 2012. All rights reserved.
(2)
aaa-002262
aaa-002264
PL (W)
P
(1)
(1)
i
(W)
(2)
400
20
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