PSMN4R0-30YL NXP Semiconductors, PSMN4R0-30YL Datasheet - Page 9

• Manufacturer Part Number: PSMN4R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN4R0-30YL
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
I
S
80
60
40
20
0
0.0
All information provided in this document is subject to legal disclaimers.
0.2
Rev. 04 — 10 March 2011
T
0.4
j
= 150 °C
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
0.6
0.8
003aac640
V
25 °C
SD
(V)
1.0
PSMN4R0-30YL
© NXP B.V. 2011. All rights reserved.
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