PSMN4R0-30YL NXP Semiconductors, PSMN4R0-30YL Datasheet - Page 3

• Manufacturer Part Number: PSMN4R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN4R0-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
10
D
10
10
(A)
120
100
I
10
D
-1
80
60
40
20
3
2
1
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
100
Limit R
DSon
= V
150
DS
All information provided in this document is subject to legal disclaimers.
T
003aac649
mb
/ I
1
D
(°C)
200
Rev. 04 — 10 March 2011
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
50
PSMN4R0-30YL
100
V
DS
(V)
100 μs
1 ms
10 ms
100 ms
10 μs
150
© NXP B.V. 2011. All rights reserved.
T
003aac650
mb
03aa16
(°C)
200
10
2
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