PSMN4R0-30YL NXP Semiconductors, PSMN4R0-30YL Datasheet - Page 8

• Manufacturer Part Number: PSMN4R0-30YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN4R0-30YL
Product data sheet
Fig 13. Normalized drain-source on-state resistance
Fig 15. Gate-source voltage as a function of gate
a
V
(V)
1.5
0.5
10
GS
2
1
0
8
6
4
2
0
−60
factor as a function of junction temperature
charge; typical values
0
V
DS
10
0
= 12 (V)
60
20
V
DS
= 19 (V)
120
30
All information provided in this document is subject to legal disclaimers.
Q
003aac647
T
G
j
( ° C)
(nC)
03aa27
180
40
Rev. 04 — 10 March 2011
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
2500
2000
1500
1000
(pF)
C
500
0
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
C
C
Q
C
oss
rss
GS1
iss
1
I
Q
D
PSMN4R0-30YL
GS
Q
GS2
Q
G(tot)
Q
GD
10
V
© NXP B.V. 2011. All rights reserved.
DS
003aaa508
003aac645
(V)
10
2
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