BUK9609-55A NXP Semiconductors, BUK9609-55A Datasheet - Page 9

• Manufacturer Part Number: BUK9609-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9609-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
20
V
DD
= 14 V
40
(A)
I
S
100
75
50
25
0
0.0
Q
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44 V
G
(nC)
03nh60
Rev. 02 — 3 February 2011
60
0.3
175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
9000
6000
3000
C
T
0.9
0
10
as a function of drain-source voltage; typical
values
j
= 25 °C
−2
V
SD
03nh59
(V)
C
C
N-channel TrenchMOS logic level FET
oss
rss
1.2
10
−1
C
iss
BUK9609-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03nh66
(V)
10
2
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