BUK9609-55A NXP Semiconductors, BUK9609-55A Datasheet - Page 3

• Manufacturer Part Number: BUK9609-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
BUK9609-55A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
(A)
I
D
120
80
40
0
mounting base temperature
Continuous drain current as a function of
0
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
capped at 75 A due to package
Limiting values
50
100
150
Conditions
T
R
T
T
T
T
T
T
pulsed; t
I
T
D
All information provided in this document is subject to legal disclaimers.
j
mb
mb
mb
mb
mb
mb
j(init)
T
GS
≥ 25 °C; T
= 75 A; V
mb
= 25 °C; V
= 100 °C; V
= 25 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 20 kΩ
03nh27
(°C)
= 25 °C; unclamped
Rev. 02 — 3 February 2011
200
p
≤ 10 µs; T
sup
j
≤ 175 °C
GS
GS
≤ 55 V; R
GS
Figure 2
= 5 V; see
= 5 V; see
= 5 V; see
mb
p
Fig 2.
= 25 °C
≤ 10 µs; see
GS
P
(%)
der
= 50 Ω; V
120
Figure
Figure
80
40
Figure 1
0
function of mounting base temperature
Normalized total power dissipation as a
0
1; see
1; see
Figure 3
GS
N-channel TrenchMOS logic level FET
= 5 V;
50
Figure 3
Figure 3
BUK9609-55A
100
[1]
[2]
[2]
[1]
[2]
Min
-
-
-15
-
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
175
175
Max
55
55
15
108
75
75
433
211
108
75
433
400
03na19
(°C)
200
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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