BUK9609-55A NXP Semiconductors, BUK9609-55A Datasheet - Page 8

• Manufacturer Part Number: BUK9609-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9609-55A
Product data sheet
Fig 9.
Fig 11. Drain-source on-state resistance as a function
R
(mΩ)
DSon
(A)
I
D
120
80
40
25
20
15
10
0
5
function of gate-source voltage; typical values
of drain current; typical values
Transfer characteristics: drain current as a
0
0
3.2 V
3.4 V
V
GS
= 3 V
1
100
175 °C
3.6 V
2
4 V
200
T
j
= 25 °C
3
All information provided in this document is subject to legal disclaimers.
I
V
D
GS
(A)
03nh62
03nh65
10 V
(V)
5 V
Rev. 02 — 3 February 2011
300
4
Fig 10. Gate-source threshold voltage as a function of
Fig 12. Normalized drain-source on-state resistance
V
GS(th)
(V)
2.5
1.5
0.5
1.5
0.5
a
2
1
0
2
1
0
-60
-60
junction temperature
factor as a function of junction temperature
N-channel TrenchMOS logic level FET
0
0
BUK9609-55A
60
60
max
typ
min
120
120
© NXP B.V. 2011. All rights reserved.
T
03aa33
T
j
j
( ° C)
03ne89
( ° C)
180
180
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