BUK9609-55A NXP Semiconductors, BUK9609-55A Datasheet - Page 5

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK9609-55A

Manufacturer Part Number
BUK9609-55A
Description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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BUK9609-55A
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5. Thermal characteristics
Table 5.
BUK9609-55A
Product data sheet
Symbol
R
R
Fig 4.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to
mounting base
thermal resistance from junction to
ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
−3
1
10
d = 0.5
0.2
0.1
0.05
0.02
single shot
−6
10
−5
All information provided in this document is subject to legal disclaimers.
10
Rev. 02 — 3 February 2011
−4
Conditions
see
mounted on a printed-circuit
board ; minimum footprint
Figure 4
10
−3
10
−2
N-channel TrenchMOS logic level FET
P
t
10
p
−1
T
t
p
BUK9609-55A
Min
-
-
δ =
(s)
03nh26
t
T
t
p
1
Typ
-
50
© NXP B.V. 2011. All rights reserved.
Max
0.71
-
Unit
K/W
K/W
5 of 14

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