BUK9609-55A /T3 NXP Semiconductors, BUK9609-55A /T3 Datasheet
BUK9609-55A /T3
Specifications of BUK9609-55A /T3
Related parts for BUK9609-55A /T3
BUK9609-55A /T3 Summary of contents
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... BUK9609-55A N-channel TrenchMOS logic level FET Rev. 02 — 3 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... Figure 13 Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET Min ≤ sup = °C; unclamped = 25 A ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET Min Max - -15 15 [1] 1; see Figure 3 - 108 ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage BUK9609-55A Product data sheet Limit DSon All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET 03nh25 = 10 μ 100 μ 100 ...
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... BUK9609-55A Product data sheet Conditions see Figure 4 mounted on a printed-circuit board ; minimum footprint −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET Min Typ - - - 50 03nh26 t p δ ...
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... ° see Figure /dt = -100 A/µ - All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET Min Typ Max = -55 ° ° 2 ...
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... V (V) DS Fig 6. 03aa36 max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET 11 DSon Drain-source on-state resistance as a function of gate-source voltage; typical values 100 g fs ...
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... Fig 10. Gate-source threshold voltage as a function of 03nh65 200 300 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET 2.5 GS(th) (V) 2 max 1.5 typ min 1 0.5 0 -60 ...
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... Fig 14. Input, output and reverse transfer capacitances 100 175 °C 0 0.0 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET C iss C oss C rss 0 −2 − function of drain-source voltage; typical ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK9609-55A separated from data sheet BUK95_9609_55A v.1. BUK95_9609_55A v.1 20020221 BUK9609-55A Product data sheet ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 3 February 2011 BUK9609-55A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 3 February 2011 Document identifier: BUK9609-55A ...