BUK714R1-40BT NXP Semiconductors, BUK714R1-40BT Datasheet - Page 8

• Manufacturer Part Number: BUK714R1-40BT
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK714R1-40BT_2
Product data sheet
Fig 9.
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
120
g fs
(S)
80
40
5
4
3
2
1
0
0
−60
junction temperature
drain current; typical values
Gate-source threshold voltage as a function of
0
25
0
60
50
max
min
typ
120
75
I D (A)
T
j
03nq18
(°C)
03aa32
Rev. 02 — 10 February 2009
100
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
C
(pF)
8000
6000
4000
2000
(A)
I
10
10
10
10
10
10
D
−1
−2
−3
−4
−5
−6
0
10 -1
gate-source voltage
as a function of drain-source voltage; typical
values
0
N-channel TrenchPLUS standard level FET
BUK714R1-40BT
1
2
min
C iss
C oss
C rss
typ
10
4
max
V DS (V)
V
© NXP B.V. 2009. All rights reserved.
GS
(V)
03nh35
03aa35
10 2
6
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