BUK714R1-40BT NXP Semiconductors, BUK714R1-40BT Datasheet - Page 5

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK714R1-40BT

Manufacturer Part Number
BUK714R1-40BT
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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5. Thermal characteristics
Table 5.
BUK714R1-40BT_2
Product data sheet
Symbol
R
R
Fig 4.
th(j-a)
th(j-mb)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Z th(j-mb)
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to mounting
base
(K/W)
10 -1
10 -2
10 -3
1
10 -6
δ = 0.5
0.2
0.1
0.05
0.02
single shot
10 -5
Conditions
minimum footprint; mounted on a
printed-circuit board
see
Figure 4
10 -4
Rev. 02 — 10 February 2009
10 -3
10 -2
N-channel TrenchPLUS standard level FET
BUK714R1-40BT
10 -1
Min
-
-
P
Typ
-
-
1
t p
T
© NXP B.V. 2009. All rights reserved.
t p (s)
δ
=
03ni64
Max
50
0.55
t p
T
t
10
Unit
K/W
K/W
5 of 13

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