BUK714R1-40BT NXP Semiconductors, BUK714R1-40BT Datasheet - Page 3

• Manufacturer Part Number: BUK714R1-40BT
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK714R1-40BT_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
Electrostatic discharge
V
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
esd
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
electrostatic discharge
voltage
[1]
[2]
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Conditions
T
R
T
see
T
T
T
T
t
I
T
HBM; C = 100 pF; R = 1.5 kΩ
p
D
j
mb
mb
mb
mb
mb
j(init)
GS
≤ 10 µs; pulsed; T
≥ 25 °C; T
= 75 A; V
= 25 °C; V
Figure 3
= 100 °C; V
= 25 °C; t
= 25 °C; see
= 25 °C;
= 20 kΩ
= 25 °C; unclamped
Rev. 02 — 10 February 2009
sup
j
≤ 175 °C
p
GS
≤ 40 V; R
≤ 10 µs; pulsed; see
GS
Figure 1
= 10 V; see
= 10 V; see
mb
= 25 °C
GS
= 50 Ω; V
Figure
Figure 2
N-channel TrenchPLUS standard level FET
Figure 3
2;
GS
= 10 V;
BUK714R1-40BT
[1]
[2]
[2]
[1]
[2]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
40
40
20
187
75
75
748
272
175
175
187
75
748
1.5
4
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
J
kV
3 of 13