BUK714R1-40BT NXP Semiconductors, BUK714R1-40BT Datasheet - Page 4

• Manufacturer Part Number: BUK714R1-40BT
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK714R1-40BT_2
Product data sheet
Fig 1.
Fig 3.
P
(%)
der
(A)
I D
120
10 3
10 2
80
40
10
0
1
function of mounting base temperature
Normalized total power dissipation as a
10 -1
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
50
100
limit R DSon = V DS / I D
Capped at 75 A due to package
150
T
mb
1
03na19
(°C)
Rev. 02 — 10 February 2009
200
Fig 2.
200
150
100
D.C.
(A)
I D
50
0
mounting base temperature
Continuous drain current as a function of
N-channel TrenchPLUS standard level FET
0
Capped at 75 A due to package
10
50
BUK714R1-40BT
V DS (V)
100
t p = 10 µs
100 µs
1 ms
10 ms
100 ms
150
© NXP B.V. 2009. All rights reserved.
T mb (°C)
03nm68
03nm69
10 2
200
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