BUK714R1-40BT NXP Semiconductors, BUK714R1-40BT Datasheet - Page 7

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology

BUK714R1-40BT

Manufacturer Part Number
BUK714R1-40BT
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
Table 6.
BUK714R1-40BT_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
R DSon
(mW)
300
200
100
(A)
I D
20
15
10
0
5
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
7
2
20
10
100
6.5
6
4
…continued
6
5.5
5
4.5
6.5
6
Label is VGS (V)
200
Lable is V GS (V)
Conditions
I
see
I
V
S
S
20
DS
= 25 A; V
= 20 A; dI
7
8
I D (A)
Figure 16
= 30 V; T
8
V DS (V)
03nq15
03nq16
10
Rev. 02 — 10 February 2009
300
10
GS
S
/dt = -100 A/µs; V
j
= 25 °C
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
R DSon
(mΩ)
GS
a
1.5
0.5
12
2
1
0
8
4
0
= -10 V;
-60
of gate-source voltage; typical values
factor as a function of junction temperature
Drain-source on-state resistance as a function
Normalized drain-source on-state resistance
N-channel TrenchPLUS standard level FET
4
0
8
BUK714R1-40BT
Min
-
-
-
60
12
Typ
0.85
70
55
120
16
© NXP B.V. 2009. All rights reserved.
V GS (V)
03aa27
T
Max
1.2
-
-
03nq17
j
( ° C)
20
180
Unit
V
ns
nC
7 of 13

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