ATxmega128B3 Atmel Corporation, ATxmega128B3 Datasheet - Page 397

• Manufacturer Part Number: ATxmega128B3
• Manufacturer: Atmel Corporation

Specifications of ATxmega128B3

• Flash (kbytes): 128 Kbytes
• Pin Count: 64
• Max. Operating Frequency: 32 MHz
• Cpu: 8-bit AVR
• # Of Touch Channels: 16
• Hardware Qtouch Acquisition: No
• Max I/o Pins: 36
• Ext Interrupts: 36
• Usb Transceiver: 1
• Usb Speed: Full Speed
• Usb Interface: Device
• Spi: 2
• Twi (i2c): 1
• Uart: 1
• Segment Lcd: 100
• Graphic Lcd: No
• Video Decoder: No
• Camera Interface: No
• Adc Channels: 8
• Adc Resolution (bits): 12
• Adc Speed (ksps): 2000
• Analog Comparators: 2
• Resistive Touch Screen: No
• Temp. Sensor: Yes
• Crypto Engine: AES/DES
• Sram (kbytes): 4
• Eeprom (bytes): 2048
• Self Program Memory: YES
• Dram Memory: No
• Nand Interface: No
• Picopower: Yes
• Temp. Range (deg C): -40 to 85
• I/o Supply Class: 1.6 to 3.6
• Operating Voltage (vcc): 1.6 to 3.6
• Fpu: No
• Mpu / Mmu: no / no
• Timers: 2
• Output Compare Channels: 6
• Input Capture Channels: 6
• Pwm Channels: 6
• 32khz Rtc: Yes
• Calibrated Rc Oscillator: Yes

29.11.5.2
29.11.5.3
29.11.5.4
29.11.5.5
29.11.5.6
8291A–AVR–10/11
Erase EEPROM Page Buffer
Write EEPROM Page
Erase and Write EEPROM Page
Erase EEPROM Page
Erase EEPROM
The erase EEPROM page buffer command is used to erase the EEPROM page buffer.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The erase EEPROM page command is used to erase one EEPROM page.
1.
2.
3.
during self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The page erase commands will only erase the locations that are loaded and tagged in the
EEPROM page buffer.
The write EEPROM page command is used to write all locations loaded in the EEPROM page
buffer into one page in EEPROM. Only the locations that are loaded and tagged in the EEPROM
page buffer will be written.
1.
2.
3.
during self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The erase and write EEPROM page command is used to first erase an EEPROM page and then
write the EEPROM page buffer into that page in EEPROM in one atomic operation.
1.
2.
3.
during self-programming.
The BUSY flag in the NVM STATUS register will be set until the operation is finished.
The erase EEPROM command is used to erase all locations in all EEPROM pages that are
loaded and tagged in the EEPROM page buffer.
1.
2.
during self-programming.
1. Load the NVM CMD register with the erase EEPROM buffer command.
2. Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
during self-programming.
Set up the NVM CMD register to the erase EEPROM page command.
Load the NVM ADDR register with the addess of the EEPROM page to erase.
Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Load the NVM CMD register with the write EEPROM page command.
Load the NVM ADDR register with the address of the EEPROM page to write.
Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Load the NVM CMD register with the erase and write EEPROM page command.
Load the NVM ADDR register with the address of the EEPROM page to write.
Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Set up the NVM CMD register to the erase EPPROM command.
Set the CMDEX bit in the NVM CTRLA register. This requires the timed CCP sequence
Atmel AVR XMEGA B
397