AT89LP51 Atmel Corporation, AT89LP51 Datasheet - Page 17

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AT89LP51

Manufacturer Part Number
AT89LP51
Description
Manufacturer
Atmel Corporation
Datasheet

Specifications of AT89LP51

Flash (kbytes)
4 Kbytes
Max. Operating Frequency
20 MHz
Cpu
8051-1C
Max I/o Pins
36
Uart
1
Sram (kbytes)
0.25
Eeprom (bytes)
256
Self Program Memory
IAP
Operating Voltage (vcc)
2.4 to 5.5
Timers
3
Isp
SPI
Watchdog
Yes

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3709D–MICRO–12/11
The LDPG bit (MEMCON.5) allows multiple data bytes to be loaded to the temporary page buf-
fer. While LDPG = 1, MOVX @DPTR,A instructions will load data to the page buffer, but will not
start a write sequence. Note that a previously loaded byte must not be reloaded prior to the write
sequence. To write the half page into the memory, LDPG must first be cleared and then a
MOVX @DPTR,A with the final data byte is issued. The address of the final MOVX determines
which half page will be written. If a MOVX @DPTR,A instruction is issued while LDPG = 0 with-
out loading any previous bytes, only a single byte will be written. The page buffer is reset after
each write operation.
writes and page writes.
Figure 3-8.
Figure 3-9.
The auto-erase bit AERS (MEMCON.6) can be set to one to perform a page erase automatically
at the beginning of any write sequence. The page erase will erase the entire page, i.e. both the
low and high half pages. However, the write operation paired with the auto-erase can only pro-
gram one of the half pages. A second write cycle without auto-erase is required to update the
other half page.
Frequently just a few bytes within a page must be updated while maintaining the state of the
other bytes. There are two options for handling this situation that allow the Flash Data memory
to emulate a traditional EEPROM memory. The simplest method is to copy the entire page into a
buffer allocated in RAM, modify the desired byte locations in the RAM buffer, and then load and
write back first the low half page (with auto-erase) and then the high half page to the Flash mem-
ory. This option requires that at least one page size of RAM is available as a temporary buffer.
The second option is to store only one half page in RAM. The unmodified bytes of the other page
are loaded directly into the Flash memory’s temporary load buffer before loading the updated
values of the modified bytes. For example, if just the low half page needs modification, the user
must first store the high half page to RAM, followed by reading and loading the unaffected bytes
of the low half page into the page buffer. Then the modified bytes of the low half page are stored
MWEN
MWEN
DMEN
MOVX
DMEN
MOVX
LDPG
LDPG
IDLE
IDLE
FDATA Byte Write
FDATA Page Write
Figures 3-8 and Figure 3-9 on page 17
t
WC
t
WC
t
WC
show the difference between byte
AT89LP51/52
17

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