MT47H16M16FG-37E Micron Technology Inc, MT47H16M16FG-37E Datasheet - Page 19

• Manufacturer Part Number: MT47H16M16FG-37E
• Description: DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H16M16FG-37E

• Package: 84FBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 533 MHz
• Maximum Random Access Time: 0.5 ns
• Operating Temperature: 0 to 85 °C

FBGA Package Capacitance
Table 4: Input Capacitance
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Parameter
Input capacitance: CK, CK#
Delta input capacitance: CK, CK#
Input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE, ODT
Delta input capacitance: Address balls, bank address balls, CS#, RAS#, CAS#, WE#, CKE,
ODT
Input/output capacitance: DQ, DQS, DM, NF
Delta input/output capacitance: DQ, DQS, DM, NF
Notes:
1. This parameter is sampled. V
2. The capacitance per ball group will not differ by more than this maximum amount for
3. ΔC are not pass/fail parameters; they are targets.
4. Reduce MAX limit by 0.5pF for the -3 speed device.
MHz, T
with I/O balls, reflecting the fact that they are matched in loading.
any given device.
C
= 25°C, V
OUT(DC)
= V
19
DDQ
DD
= +1.8V ±0.1V, V
/2, V
OUT
Micron Technology, Inc. reserves the right to change products or specifications without notice.
(peak-to-peak) = 0.1V. DM input is grouped
256Mb: x4, x8, x16 DDR2 SDRAM
DDQ
= +1.8V ±0.1V, V
Symbol Min Max Units Notes
C
C
C
C
C
DCK
C
DIO
CK
IO
DI
I
©2003 Micron Technology, Inc. All rights reserved.
1.0
1.0
2.5
–
–
–
REF
0.25
0.25
2.0
2.0
4.0
0.5
= V
Packaging
SS
pF
pF
pF
pF
pF
pF
, f = 100
2, 3
2, 3
1, 4
2, 3
1
1