MT47H16M16FG-37E Micron Technology Inc, MT47H16M16FG-37E Datasheet - Page 118

• Manufacturer Part Number: MT47H16M16FG-37E
• Description: DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin FBGA Tray
• Manufacturer: Micron Technology Inc
• Type: DDR2 SDRAMr

Specifications of MT47H16M16FG-37E

• Package: 84FBGA
• Density: 256 Mb
• Address Bus Width: 15 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 533 MHz
• Maximum Random Access Time: 0.5 ns
• Operating Temperature: 0 to 85 °C

Figure 75: PRECHARGE Command-to-Power-Down Entry
Figure 76: LOAD MODE Command-to-Power-Down Entry
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Notes:
Note:
Command
Command
Address
Address
1. The earliest precharge power-down entry may occur is at T2, which is 1 ×
1. Valid address for LM command includes MR, EMR, EMR(2), and EMR(3) registers.
2. All banks must be in the precharged state and
3. The earliest precharge power-down entry is at T3, which is after
CK#
CKE
CK#
A10
CKE
CK
PRECHARGE command. Precharge power-down entry occurs prior to
isfied.
CK
Valid
T0
Valid
T0
t RP 2
Valid 1
LM
T1
Single bank
Valid
All banks
118
PRE
T1
vs
1 x
t MRD
t
CK
NOP
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T2
Power-down 1
256Mb: x4, x8, x16 DDR2 SDRAM
entry
NOP
T2
t
Power-down 3
RP met prior to issuing LM command.
entry
NOP
T3
t
CKE (MIN)
T3
Power-Down Mode
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t CKE (MIN)
Don’t Care
t
MRD is satisfied.
T4
t
RP (MIN) being sat-
Don’t Care
t
CK after the