MT47H16M16FG-37E Micron Technology Inc, MT47H16M16FG-37E Datasheet - Page 105
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MT47H16M16FG-37E
Manufacturer Part Number
MT47H16M16FG-37E
Description
DRAM Chip DDR2 SDRAM 256M-Bit 16Mx16 1.8V 84-Pin FBGA Tray
Manufacturer
Micron Technology Inc
Type
DDR2 SDRAMr
Datasheet
1.MT47H16M16BG-3B_TR.pdf
(128 pages)
Specifications of MT47H16M16FG-37E
Package
84FBGA
Density
256 Mb
Address Bus Width
15 Bit
Operating Supply Voltage
1.8 V
Maximum Clock Rate
533 MHz
Maximum Random Access Time
0.5 ns
Operating Temperature
0 to 85 °C
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MT47H16M16FG-37E
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT47H16M16FG-37E IT:B
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
MT47H16M16FG-37E:B
Manufacturer:
MICRON
Quantity:
20 000
Figure 62: Bank Write – Without Auto Precharge
PDF: 09005aef8117c187
256MbDDR2.pdf - Rev. M 7/09 EN
Bank select
DQS, DQS#
Command
Address
DQ 6
CK#
CKE
A10
DM
CK
NOP 1
T0
Notes:
Bank x
ACT
RA
RA
T1
1. NOP commands are shown for ease of illustration; other commands may be valid at
2. BL = 4 and AL = 0 in the case shown.
3. Disable auto precharge.
4. “Don’t Care” if A10 is HIGH at T9.
5. Subsequent rising DQS signals must align to the clock within
6. DI n = data-in for column n; subsequent elements are applied in the programmed order.
7.
8.
t CK
these times.
t
t
DSH is applicable during
DSS is applicable during
t RCD
NOP 1
T2
t CH
t CL
WRITE 2
Bank x
Col n
3
T3
WL ± t DQSS (NOM)
WL = 2
NOP 1
t
105
T4
t
DQSS (MAX) and is referenced from CK T6 or T7.
DQSS (MIN) and is referenced from CK T5 or T6.
t WPRE
NOP 1
T5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
DI
n
256Mb: x4, x8, x16 DDR2 SDRAM
T5n
t DQSL t DQSH t WPST
t RAS
NOP 1
5
T6
T6n
Transitioning Data
NOP 1
T7
©2003 Micron Technology, Inc. All rights reserved.
t
DQSS.
t WR
NOP 1
T8
One bank
All banks
Don’t Care
Bank x 4
T9
PRE
WRITE
t RP