HY27US08281A-TPCB Hynix, HY27US08281A-TPCB Datasheet - Page 8

• Manufacturer Part Number: HY27US08281A-TPCB
• Description: Flash Mem Parallel 3.3V 128M-Bit 16M x 8 10us 48-Pin TSOP-I
• Manufacturer: Hynix

Specifications of HY27US08281A-TPCB

• Package: 48TSOP-I
• Cell Type: NAND
• Density: 128 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 16KByte x 1024
• Support Of Page Mode: Yes
• Timing Type: Asynchronous
• Operating Temperature: 0 to 70 °C
• Interface Type: Parallel

READ 1
READ 2
READ ID
RESET
PAGE PROGRAM
COPY BACK PGM
BLOCK ERASE
READ STATUS REGISTER
EXTRA AREA EXIT
LOCK BLOCK
LOCK TIGHT
UNLOCK (start area)
UNLOCK (end area)
READ LOCK STATUS
Rev 0.6 / Nov. 2005
NOTE:
1. L must be set to Low.
2. A8 is set to LOW or High by the 00h or 01h Command.
NOTE:
1. L must be set to Low.
2nd Cycle
2nd Cycle
3rd Cycle
3rd Cycle
1st Cycle
1st Cycle
FUNCTION
IO0
A17
IO0
A0
A9
A17
Table 4: Address Cycle Map(x16)
A0
A9
1st CYCLE
00h/01h
2Ah
2Ch
7Ah
50h
90h
FFh
80h
00h
60h
70h
06h
23h
24h
Table 3: Address Cycle Map(x8)
IO1
A10
A18
A1
IO1
A10
A18
A1
Table 5: Command Set
2nd CYCLE
IO2
A11
A19
A2
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
D0h
8Ah
10h
-
-
-
-
-
IO2
A11
A19
A2
IO3
A12
A20
A3
3rd CYCLE
IO3
A12
A20
A3
(10h)
-
-
-
-
-
-
-
IO4
A13
A21
A4
HY27US(08/16)281A Series
IO4
A13
A21
A4
4th CYCLE
IO5
A14
A22
A5
IO5
A14
A22
A5
IO6
A15
A23
A6
Acceptable command
during busy
IO7
IO6
A16
A15
A23
L
A6
A7
(1)
Yes
Yes
IO8-IO15
IO7
A16
L
A7
L
L
L
(1)
(1)
(1)
(1)
8