HY27US08281A-TPCB Hynix, HY27US08281A-TPCB Datasheet - Page 38

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HY27US08281A-TPCB

Manufacturer Part Number
HY27US08281A-TPCB
Description
Flash Mem Parallel 3.3V 128M-Bit 16M x 8 10us 48-Pin TSOP-I
Manufacturer
Hynix
Datasheet

Specifications of HY27US08281A-TPCB

Package
48TSOP-I
Cell Type
NAND
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
16KByte x 1024
Support Of Page Mode
Yes
Timing Type
Asynchronous
Operating Temperature
0 to 70 °C
Interface Type
Parallel

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HY27US(08/16)281A Series
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
System Interface Using CE don’t care
To simplify system interface, CE may be deasserted during data loading or sequential data-reading as shown below.
So, it is possible to connect NAND Flash to a microprocessor. The only function that was removed from standard NAND
Flash to make CE don’t care read operation was disabling of the automatic sequential read function.
Figure 29: Program Operation with CE don’t-care.
Figure 30: Read Operation with CE don’t-care.
Rev 0.6 / Nov. 2005
38

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