HY27US08281A-TPCB Hynix, HY27US08281A-TPCB Datasheet - Page 24

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HY27US08281A-TPCB

Manufacturer Part Number
HY27US08281A-TPCB
Description
Flash Mem Parallel 3.3V 128M-Bit 16M x 8 10us 48-Pin TSOP-I
Manufacturer
Hynix
Datasheet

Specifications of HY27US08281A-TPCB

Package
48TSOP-I
Cell Type
NAND
Density
128 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
3.3 V
Sector Size
16KByte x 1024
Support Of Page Mode
Yes
Timing Type
Asynchronous
Operating Temperature
0 to 70 °C
Interface Type
Parallel

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Rev 0.6 / Nov. 2005
CE
RE
I/Ox
R/B
Notes : Transition is measured ±200mV from steady state voltage with load.
Figure 8: Sequential Out Cycle after Read (CLE=L, WE#=H, ALE=L)
This parameter is sampled and not 100% tested.
t
t
RR
REA
t
CEA
t
RP
Dout
t
RC
Figure 7. Input Data Latch Cycle
128Mbit (16Mx8bit / 8Mx16bit) NAND Flash
t
REH
t
REA
Dout
t
RHZ
HY27US(08/16)281A Series
t
REA
Dout
t
t
RHZ*
OH
t
t
OH
CHZ*
24

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