TE28F160S375 Intel, TE28F160S375 Datasheet - Page 23

• Manufacturer Part Number: TE28F160S375
• Manufacturer: Intel

Specifications of TE28F160S375

• Cell Type: NOR
• Density: 16Mb
• Access Time (max): 75ns
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 21/20Bit
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7/3.3/5V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8/16Bit
• Number Of Words: 2M/1M
• Supply Current: 30mA
• Mounting: Surface Mount
• Pin Count: 56
• Lead Free Status / Rohs Status: Not Compliant

4.2.6
This field provides critical details of the flash device
geometry.
27h
28h
2Ah
2Ch
2Dh
Offset
ADVANCE INFORMATION
DEVICE GEOMETRY DEFINITION
01h
02h
02h
01h
04h
Length
(bytes)
Device Size = 2
Flash Device Interface Description
Maximum Number of Bytes in Write Buffer = 2
Number of Erase Block Regions within Device:
Erase Block Region Information
bits 15–0 = y, Where y+1 = Number of Erase Blocks of
Identical Size within Region
bits 31–16 = z, Where the Erase Block(s) within This Region
are (z)
Table 10. Device Geometry Definition
256 Bytes
value
0002h
bits 7–0 = x = # of Erase Block Regions
N
in Number of Bytes
Description
meaning
x8/x16 asynchronous
N
28F160S3, 28F320S3
27:
27:
28:
29:
2A:
2B:
2C:
y:
2D:
2E:
y:
2D:
2E:
z:
2F:
30:
28F320S3/
28F160S3
(16Mb)
(32Mb)
(16Mb)
(32Mb)
003Fh
0000h
0015h
0002h
0000h
0005h
0000h
0001h
32 Blk
001Fh
0000h
64 Blk
64-KB
0000h
0001h
0016h
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