M29W800AT90M1 Micron Technology Inc, M29W800AT90M1 Datasheet - Page 22

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M29W800AT90M1

Manufacturer Part Number
M29W800AT90M1
Description
Manufacturer
Micron Technology Inc
Datasheet

Specifications of M29W800AT90M1

Cell Type
NOR
Density
8Mb
Access Time (max)
90ns
Interface Type
Parallel
Boot Type
Top
Address Bus
20/19Bit
Operating Supply Voltage (typ)
3.3V
Operating Temp Range
0C to 70C
Package Type
SO
Program/erase Volt (typ)
2.7 to 3.6V
Sync/async
Asynchronous
Operating Temperature Classification
Commercial
Operating Supply Voltage (min)
2.7V
Operating Supply Voltage (max)
3.6V
Word Size
8/16Bit
Number Of Words
1M/512K
Supply Current
10mA
Mounting
Surface Mount
Pin Count
44
Lead Free Status / Rohs Status
Supplier Unconfirmed

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0
Part Number:
M29W800AT90M1T
Manufacturer:
ST
0
M29W800AT, M29W800AB
Table 17. Write AC Characteristics, W Controlled
(T
Note: 1. Sampled only, not 100% tested.
22/40
t
PHPHH
A
t
t
Symbol
PHWL
WHRL
t
t
t
t
t
t
t
t
t
t
= 0 to 70°C, –20 to 85°C or –40 to 85°C)
t
t
VCHEL
t
WHWL
WLWH
DVWH
GHWL
WHDX
WHEH
WHGL
WLAX
AVWL
ELWL
PLPX
AVAV
2. This timing is for Temporary Block Unprotection operation.
(1, 2)
(1)
(1)
t
t
t
t
t
t
BUSY
t
VIDR
WPH
t
t
t
RSP
t
VCS
t
t
OEH
t
Alt
t
WC
WP
DH
CH
AS
DS
CS
RP
AH
Address Valid to Next Address Valid
Address Valid to Write Enable Low
Input Valid to Write Enable High
Chip Enable Low to Write Enable Low
Output Enable High to Write Enable Low
RP Rise Time to V
RP High to Write Enable Low
RP Pulse Width
V
Write Enable High to Input Transition
Write Enable High to Chip Enable High
Write Enable High to Output Enable Low
Program Erase Valid to RB Delay
Write Enable High to Write Enable Low
Write Enable Low to Address Transition
Write Enable Low to Write Enable High
CC
High to Chip Enable Low
Parameter
ID
V
CC
Min
500
500
80
35
50
30
45
35
0
0
0
4
0
0
0
CL = 30pF
= 3.0V to 3.6V
M29W800AT / M29W800AB
80
Max
90
V
CC
Min
500
500
90
45
50
30
45
35
0
0
0
4
0
0
0
CL = 30pF
= 2.7V to 3.6V
90
Max
90
Unit
ns
ns
ns
ns
ns
ns
µs
ns
µs
ns
ns
ns
ns
ns
ns
ns

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