SSP7N60B Fairchild Semiconductor, SSP7N60B Datasheet - Page 4

• Manufacturer Part Number: SSP7N60B
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of SSP7N60B

• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 1.2Ohm
• Drain-source On-volt: 600V
• Gate-source Voltage (max): ±30V
• Continuous Drain Current: 7A
• Power Dissipation: 147W
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Dc: 0638
• Lead Free Status / Rohs Status: Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
10
10
8
6
4
2
0
1.2
1.1
1.0
0.9
0.8
10
10
10
25
-100
-1
-2
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
T
V
vs Temperature
10
J
C
, Junction Temperature [
DS
for SSP7N60B
, Case Temperature [ ℃ ]
1
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
75
※ Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
50
o
C
o
DS(on)
C
DC
100
10
10 ms
2
100
(Continued)
o
1 ms
C]
※ Notes :
1. V
2. I
100 s
125
D
G S
= 250 μ A
= 0 V
150
10 s
10
3
150
200
10
10
10
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 9-2. Maximum Safe Operating Area
-1
-2
-100
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
V
T
10
J
DS
, Junction Temperature [
1
0
, Drain-Source Voltage [V]
for SSS7N60B
Operation in This Area
is Limited by R
※ Notes :
1. T
2. T
3. Single Pulse
C
J
= 150
= 25
DC
50
o
C
o
DS(on)
C
100 ms
10
10 ms
2
100
1 ms
o
C]
100 s
※ Notes :
1. V
2. I
150
D
GS
= 3.5 A
= 10 V
10
3
Rev. B, June 2002
200