PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 5

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHC21025
Product data sheet
Symbol
R
Fig 4.
th(j-sp)
R
(K/W)
th j-s
10
10
10
−1
1
2
10
Transient thermal impedance from junction to solder point as a function of pulse duration
−6
Thermal characteristics
Parameter
thermal resistance from junction to solder
point
0.05
0.75
0.33
0.02
0.01
0.5
0.1
0.2
δ =
10
0
−5
All information provided in this document is subject to legal disclaimers.
10
−4
Rev. 04 — 17 March 2011
10
−3
Conditions
10
Complementary intermediate level FET
−2
Min
-
10
P
−1
PHC21025
Typ
-
t
p
t
p
T
© NXP B.V. 2011. All rights reserved.
(s)
δ =
mbe152
Max
35
t
T
t
p
1
Unit
K/W
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