PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 4

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PHC21025
Product data sheet
Fig 1.
Fig 3.
P
(W)
2.5
2.0
1.5
1.0
0.5
tot
0
Power derating curve
δ = 0.01
T
(1) R
SOAR; P-channel
0
s
= 80 °C.
DSon
limitation.
50
100
−10
−10
−10
(A)
I
−10
D
−1
−10
150
−1
−2
2
All information provided in this document is subject to legal disclaimers.
−1
P
T
s
(°C)
mlb836
t
p
200
T
Rev. 04 — 17 March 2011
δ =
−1
(1)
T
t
t
p
Fig 2.
DC
−10
10
10
(A)
10
I
D
10
−1
−2
1
10
2
V
δ = 0.01.
T
(1) R
SOAR; N-channel
DS
−1
s
P
= 80 °C.
(V)
10 μs
1 ms
0.1 s
mbe155
t
DSon
p
Complementary intermediate level FET
=
t
p
−10
T
limitation.
2
δ =
(1)
1
t
T
t
p
DC
10
PHC21025
V
© NXP B.V. 2011. All rights reserved.
DS
1 ms
0.1 s
10μs
(V)
t
p
mlb833
=
10
2
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