PHC21025 NXP Semiconductors, PHC21025 Datasheet - Page 11

• Manufacturer Part Number: PHC21025
• Description: Intermediate level N-channel and P-channel complementary pair enhancement mode Field-Effect Transistor (FET) in a plastic package using vertical D-MOS technology
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of PHC21025

• Number Of Elements: 2
• Polarity: N/P
• Channel Mode: Enhancement
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Power Dissipation: 2W
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SO
• Lead Free Status / Rohs Status: Compliant

NXP Semiconductors
PHC21025
Product data sheet
Fig 17. Temperature coefficient of gate-source
Fig 19. Temperature coefficient of drain-source on-state resistance; P-channel
k
1.2
1.1
1.0
0.9
0.8
0.7
0.6
threshold voltage
Typical V
Typical R
(1) I
(2) I
−50
D
D
= -1 A; V
= -0.5 A; V
GSth
DSon
0
at I
at:
GS
GS
D
= -10 V.
= 1 mA; V
= -4.5 V.
50
k
DS
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
−50
= V
All information provided in this document is subject to legal disclaimers.
T
j
GS
mbe138
(°C)
= V
150
Rev. 04 — 17 March 2011
0
GSth
.
50
Fig 18. Temperature coefficient of drain-source
k
1.8
1.6
1.4
1.2
1.0
0.8
0.6
100
−50
on-state resistance; N-channel
Typical R
(1) I
(2) I
T
j
D
D
mbe146
(°C)
Complementary intermediate level FET
= 2.2 A; V
= 1 A; V
(1)
(2)
150
DSon
0
GS
at:
GS
= 4.5 V.
= 10 V.
50
PHC21025
100
© NXP B.V. 2011. All rights reserved.
(1)
(2)
T
j
(°C)
mbe139
150
11 of 16