MJE803S Fairchild Semiconductor, MJE803S Datasheet
MJE803S
Manufacturer Part Number
MJE803S
Description
Manufacturer
Fairchild Semiconductor
Datasheet
1.MJE803S.pdf
(4 pages)
Specifications of MJE803S
Polarity
NPN
Number Of Elements
1
Collector-emitter Voltage
80V
Collector-base Voltage
80V
Emitter-base Voltage
5V
Collector-emitter Saturation Voltage
2.5V
Collector Current (dc) (max)
4A
Dc Current Gain
750
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Through Hole
Pin Count
3
Package Type
TO-126
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MJE803STU
Manufacturer:
Fairchild Semiconductor
Quantity:
1 900
©2001 Fairchild Semiconductor Corporation
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
Electrical Characteristics
Monolithic Construction With Built-in Base-
Emitter Resistors
• High DC Current Gain : h
• Complement to MJE700/701/702/703
V
I
I
P
T
h
V
V
V
T
BV
I
I
I
V
C
B
CEO
CBO
EBO
FE
J
EBO
C
STG
CE
CBO
CEO
Symbol
BE
Symbol
CEO
(sat)
(on)
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Base-Emitter ON Voltage
Collector-Emitter Saturation Voltage
Collector- Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Dissipation (T
Junction Temperature
Storage Temperature
FE
Parameter
= 750 (Min.) @ I
Parameter
: MJE800/801
: MJE802/803
: MJE800/801
: MJE802/803
: MJE801/803
: ALL DEVICES
: MJE800/802
: MJE801/803
: ALL DEVICES
: MJE800/802
: MJE801/803
: ALL DEVICES
: MJE800/802
MJE800/801/802/803
C
T
=25 C)
C
=25 C unless otherwise noted
T
C
C
= 1.5 and 2.0A DC
=25 C unless otherwise noted
: MJE800/801
: MJE800/801
: MJE802/803
: MJE802/803
I
V
V
V
V
T
V
V
V
V
I
I
I
V
V
V
C
C
C
C
C
CE
CE
CB
CB
BE
CE
CE
CE
CE
CE
CE
= 50mA, I
= 1.5A, I
= 2A, I
= 4A, I
= 100 C
= 60V, I
= 80V, I
= Rated BV
= Rated BV
= 5V, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
= 3V, I
- 55 ~ 150
B
B
Test Condition
= 40mA
= 40mA
C
C
C
C
B
C
C
C
Value
B
B
B
150
= 0
= 30mA
= 1.5A
= 2A
= 4A
= 1.5A
= 2A
= 4A
0.1
60
80
60
80
40
= 0
= 0
= 0
5
4
CEO
CEO
, I
, I
E
E
Units
= 0
= 0
W
V
V
V
V
V
A
A
1
C
C
1. Emitter
B
R 1 10 k
R 2 0.6 k
2.Collector
Equivalent Circuit
Min.
750
750
100
60
80
R1
TO-126
Max.
100
100
100
500
2.5
2.8
2.5
2.5
3
3
R2
2
3.Base
Rev. A1, February 2001
C
E
Units
mA
V
V
V
V
V
V
V
V
A
A
A
A
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MJE803S Summary of contents
Page 1
... Collector Cut-off Current CEO I Collector Cut-off Current CBO I Emitter Cut-off Current EBO h DC Current Gain FE V (sat) Collector-Emitter Saturation Voltage CE V (on) Base-Emitter ON Voltage BE ©2001 Fairchild Semiconductor Corporation MJE800/801/802/803 = 1.5 and 2. =25 C unless otherwise noted C Value : MJE800/801 60 : MJE802/803 80 : MJE800/801 60 : MJE802/803 0.1 =25 C) ...
Page 2
... (sat) CE 0.1 0.01 0.1 I [A], COLLECTOR CURRENT C Figure 3. Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 100 10 1 MJE800/801 MJE802/803 0 [V], COLLECTOR-EMITTER VOLTAGE CE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 10000 1000 I = 150 100 A B 100 0.01 1000 I = 500 100 10 1 0.01 ...
Page 3
... Package Demensions ø3.20 0.10 0.75 0.10 1.60 0.10 0.75 0.10 2.28TYP [2.28 0.20] ©2001 Fairchild Semiconductor Corporation TO-126 8.00 0.30 #1 2.28TYP [2.28 0.20] 3.25 0.20 (1.00) (0.50) 1.75 0.20 +0.10 0.50 –0.05 Dimensions in Millimeters Rev. A1, February 2001 ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ CMOS™ EnSigna™ FACT™ FACT Quiet Series™ ...