MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 72

• Manufacturer Part Number: MT46H8M32LFB5-6:H
• Description: IC SDRAM 256MB 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 34: WRITE Burst
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Notes:
Command
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
1. An uninterrupted burst of 4 is shown.
2. A10 is LOW with the WRITE command (auto precharge is disabled).
3. D
Address
DQS
DQS
DQS
DQ
DQ
DQ
CK#
DM
DM
DM
IN
CK
b = data-in for column b.
3
3
3
WRITE
Bank a,
Col b
T0
1,2
t DQSS
t DQSS
t DQSS
D
b
IN
72
NOP
D
T1
b
IN
b+1
D
D
256Mb: x16, x32 Mobile LPDDR SDRAM
b
IN
IN
Don’t Care
b+1
D
IN
Micron Technology, Inc. reserves the right to change products or specifications without notice.
b+2
D
b+1
D
IN
IN
NOP
b+2
T2
D
IN
b+2
D
b+3
D
IN
IN
T2n
b+3
D
IN
Transitioning Data
b+3
D
IN
T3
NOP
© 2008 Micron Technology, Inc. All rights reserved.
WRITE Operation