MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 63

• Manufacturer Part Number: MT46H8M32LFB5-6:H
• Description: IC SDRAM 256MB 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Figure 26: Terminating a READ Burst
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Command
Command
Address
Address
DQS
DQS
DQ
DQ
CK#
CK#
CK
CK
3
3
Notes:
Bank a,
Col n
Bank a,
Col n
READ
READ
T0
T0
1. BL = 4, 8, or 16.
2. BST = BURST TERMINATE command; page remains open.
3. D
4. Shown with nominal
5. CKE = HIGH.
1
1
OUT
CL = 2
n = data-out from column n.
BST
BST
T1
T1
CL = 3
2
2
T1n
D
t
OUT
AC,
n
T2
NOP
T2
NOP
63
t
DQSCK, and
D
n + 1
T2n
OUT
T2n
256Mb: x16, x32 Mobile LPDDR SDRAM
D
OUT
n
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T3
NOP
T3
NOP
t
DQSQ.
D
n + 1
Don’t Care
OUT
T3n
T4
T4
NOP
NOP
Transitioning Data
© 2008 Micron Technology, Inc. All rights reserved.
READ Operation
T5
T5
NOP
NOP