MT46H8M32LFB5-6:H Micron Technology Inc, MT46H8M32LFB5-6:H Datasheet - Page 17

• Manufacturer Part Number: MT46H8M32LFB5-6:H
• Description: IC SDRAM 256MB 166MHZ 90VFBGA
• Manufacturer: Micron Technology Inc
• Series: -r
• Type: DDR SDRAMr

Specifications of MT46H8M32LFB5-6:H

• Format - Memory: RAM
• Memory Type: Mobile DDR SDRAM
• Memory Size: 256M (8Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-VFBGA
• Organization: 8Mx32
• Density: 256Mb
• Address Bus: 14b
• Access Time (max): 6.5/5ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 1.8V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 1.95V
• Operating Supply Voltage (min): 1.7V
• Supply Current: 120mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Specifications
Table 3: Absolute Maximum Ratings
Note 1 applies to all parameters in this table
Table 4: AC/DC Electrical Characteristics and Operating Conditions
Notes 1–5 apply to all parameters/conditions in this table; V
PDF: 09005aef834bf85b
256mb_mobile_ddr_sdram_t36n.pdf - Rev. I 09/10 EN
Parameter
V
Voltage on any pin relative to V
Storage temperature (plastic)
Parameter/Condition
Supply voltage
I/O supply voltage
Address and command inputs
Input voltage high
Input voltage low
Clock inputs (CK, CK#)
DC input voltage
DC input differential voltage
AC input differential voltage
AC differential crossing voltage
Data inputs
DC input high voltage
DC input low voltage
AC input high voltage
AC input low voltage
Data outputs
DC output high voltage: Logic 1 (I
DC output low voltage: Logic 0 (I
Leakage current
Input leakage current
Any input 0V ≤ V
(All other pins not under test = 0V)
DD
/V
DDQ
supply voltage relative to V
IN
≤ V
DD
Note:
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability.
1. V
SS
OL
V
OH
DD
DD
= 0.1mA)
= –0.1mA)
SS
.
and V
DDQ
must be within 300mV of each other at all times. V
V
Symbol
DD
Symbol
T
V
V
V
V
V
V
V
V
/V
STG
V
V
V
ID(DC)
ID(AC)
IH(DC)
IH(AC)
V
V
V
IL(DC)
IL(AC)
V
IN
DDQ
OH
I
DD
OL
IH
IN
DDQ
IX
IL
I
DD
17
/V
DDQ
256Mb: x16, x32 Mobile LPDDR SDRAM
0.8 × V
0.4 × V
0.6 × V
0.4 × V
0.7 × V
0.8 × V
0.9 × V
= 1.70–1.95V
Min
1.70
1.70
–0.3
–0.3
–0.3
–0.3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
–1
–
Min
–0.3
–0.3
–55
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
V
0.2 × V
V
V
V
0.6 × V
V
0.3 × V
V
0.2 × V
0.1 × V
DDQ
DDQ
DDQ
DDQ
DDQ
DDQ
Max
Electrical Specifications
1.95
1.95
+1
–
+ 0.3
+ 0.3
+ 0.6
+ 0.6
+ 0.3
+ 0.3
DDQ
DDQ
DDQ
DDQ
DDQ
© 2008 Micron Technology, Inc. All rights reserved.
+150
Max
+2.7
+2.7
DDQ
Unit
must not exceed
μA
V
V
V
V
V
V
V
V
V
V
V
V
V
V
8, 9, 13
8, 9, 13
8, 9, 13
8, 9, 13
Notes
10, 11
10, 11
10, 12
Unit
6, 7
6, 7
8, 9
8, 9
˚C
10
V
V